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    • 4 inches
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  • Epitaxial film thickness (0.5 ~ 150um)

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TECHNOLOG AND SERVICE

Process Capability


 

Technology and Service


 

 

 

    ✔  外延掺杂剂:N型和P型

    ✔  外延片尺寸:4 inch~12inch

    ✔  外 延 膜 厚:0.5~150μm

    ✔  外延电阻率:0.01~200 ohm-cm

 

Epi Thickness

ltemSingleMini batch
Within wafer1.00%2.00%
Wafer to wafer2.00%2.00%
Run to Run/2.00%


 

Epi Resistivity

 

RangeltemSingleMini batch

 

0.01~5.0

ohm~cm

Within wafer2.00%2.00%
Wafer to wafer1.50%2.00%
Run to Run/1.50%

 

5.0~50 

ohm~cm

Within wafer2.50%2.50%
Wafer to wafer2.00%2.50%
Run to Run/2.00%

 

 


 

 

    ✔  外延掺杂剂:N型和P型

    ✔  外延片尺寸:4 inch~12inch

    ✔  外 延 膜 厚:0.5~150μm

    ✔  外延电阻率:0.01~200 ohm-cm

 

Epi Thickness

 

ltem Single Mini batch
Within wafer 1.00% 2.00%
Wafer to wafer 2.00% 2.00%
Run to Run / 2.00%

 

 

 

 

 

 

 

 

Epi Resistivity

 

Range ltem Single Mini batch

 

0.01~5.0ohm~cm

Within wafer 2.00% 2.00%
Wafer to wafer 1.50% 2.00%
Run to Run / 1.50%

 

5.0~50 ohm~cm

Within wafer 2.50% 2.50%
Wafer to wafer 2.00% 2.50%
Run to Run / 2.00%

 

 


    依据先进的MOCVD外延平台和专有的缓冲层技术,可提供


    ✔ 4 inch~8 inch 硅基/碳化硅基/蓝宝石基/氮化镓HEMT外延片;

    ✔ 100V/400V/600V/900V/1200V各种击穿电压规格外延片;

    ✔ 5G/6G射频外延片;

    ✔ 耗尽型、pGaN增强型及各种定制结构外延片;



 

     ✔  外延掺杂剂:N型和P型;

     ✔  外延片尺寸:4 inch 、6 inch;

     ✔  外 延 膜 厚:0.5~50um;

     ✔  外 延 浓 度:1E14-1E19/cm3

 

lten ltem spec typical

Thickness

Uniformity

Within wafer 3.00% 1.00%
Wafer to wafer 3.00% 2.00%

Dopant

concentration

Uniformity

Within wafer 6.00% 4.00%
Wafer to wafer 6.00% 4.00%

 

 

 

     ✔  外延掺杂剂:N型和P型;

     ✔  外延片尺寸:4 inch 、6 inch;

     ✔  外 延 膜 厚:0.5~50um;

     ✔  外 延 浓 度:1E14-1E19/cm3

 

ltenltemspectypical

Thickness

Uniformity

Within wafer3.00%1.00%
Wafer to wafer3.00%2.00%

Dopant

concentration

Uniformity

Within wafer6.00%4.00%
Wafer to wafer6.00%4.00%

 





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