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    • Si Epitaxy Product
    • GaN/Si Epitaxy Product
    • SiC/SiC Epitaxy Product

    Product

  • finish size

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    • 4 inches
    • 5 inches
    • 6 inches
    • 8 inches

    finish size

  • Epitaxial film thickness (0.5 ~ 150um)

  • Other requirements / or application scope

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PRODUCT AND APPLICATIONS

——  GaN/Si Epitaxy Products  ——

 

100V~1200V GaN Epitaxy on silicon substrate

/ SPC Control

/ Professional services team with mass production experience

Product without patent infringement as we know

Fully control the epi quality by surface mapping and XRD test

Low wafer bowing reduce crack risk during device process

Low defect trap to avoid current collapse

Low sheet resistance to improve device current density

Based on advanced MOCVD epitaxial platform and proprietary buffer layer technology, we can provide

 

■ 4-8 inch silicon / silicon carbide / Sapphire / GaN HEMT Epitaxial Wafers;

 

■ 100V/400V/600V/900V/1200VEpitaxial Wafers with various breakdown voltage specifications;

 

■ 5G/6GRF epitaxial wafer;

 

■ Depleted, pGaN enhanced and various custom-made Epitaxial plates;

 


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